章国豪 教授

作者: 时间:2019-07-10 点击数:

http://yzw.gdut.edu.cn/__local/2/40/17/65AAF3F5EEE586ED2681C36A2AB_91A6E864_216D0.jpg

姓名:章国豪(教授)

所属学院:信息工程学院

导师类别:硕导、博导

职务:信息工程学院院长

科研方向:射频、微波及毫米波单片电路及组件方面的产品研究

联系方式:18924002666

博士招生学院:信息工程学院、自动化学院

硕士招生学院:信息工程学院、自动化学院

个人简述:

章博士,英国利兹大学微电子学与固体电子学博士,IEEE高级会员,IEEE RFIC技术委员会评委,曾作为团队带头人和项目负责人主持了20多项科研项目,在国际会议及刊物上发表论文30余篇,申请明专利10项;曾多次组织和主持业界重要的国际会议和论坛,作专题邀请报告10余次。此外,还作为团队带头人参与了中国某专用射频芯片设计有限公司承担的两项国家863计划项目。章博士曾获南京电子器件研究所(55所)科技进步一等奖及电子部科技进步二等奖。赴美工作期间,多次荣获美国公司发明大奖,被美国最近出版的2010年期Who’s who收编为名人录。主导撰写多部专著及公司内部技术报告。

学科领域:

科学学位:控制科学与工程 测试计量技术及仪器

通信与信息系 统精密仪器及机械

仪器科学与技术 信息与通信工程

专业学位:集成电路工程 电子与通信工程

教育背景:

1985年07月 中国 南京工学院(现东南大学) 电磁场与微波技术 学士学位(B.S.)

1988年04月 中国 南京工学院(现东南大学)电磁场与微波技术 硕士学位(M.S.)

1996年11月 英国 英国Leeds大学 微电子学 博士学位(Ph. D)

工作经历:

1988年-1993年 中国南京电子器件研究所 微波集成电路及模组设计组组长

1996年-1998年 美国Epsilon-Lambda Electronics Corp 高级工程师

1998年-2004年 美国California Amplifier Inc. 首席设计师

2004年至今 美国Skyworks Solutions Inc. 新产品开发部高级经理资深首席设计师

学术兼职:

IEEE Senior Member

IEEE Radio-Frequency Integrated Circuits Symp. (RFIC), Technical Program Committee

IEEE RFIC Symp., Active/Passive Circuit Committee Chair/co-Chair, 2007-2009.

Editorial Board Member, International Journal of Active and Passive Electronic Components, Hindawi Publishing (http://www.hindawi.com).

主要荣誉:

1.1st Place of Advanced Science and Technology for the product: the Ka band Pulsed Injection-locked IMPATT Oscillator, in Nanjing Electronics Device Institute, Nanjing, P. R. China in 1989.

2. 2nd Place of Advanced Science and Technology for the product: the Ka band Pulsed Injection-locked IMPATT Oscillator, in the Ministry of Electronics, P. R. China, 1990

3. Sino-British Scholarship for PhD Education in the United Kingdom from 1993-1996.

4.76GHz Car Collision Avoidance Front-end Module: 1st Prototype in the world for Toyota Motors, Japan.

5. Ku band dual channel extremely low noise Direct-Broadcasting Satellite (DBS) receivers (chipset and module), Innovation Award, California Amplifier Inc, California, USA, in 2003.

6.Load Insensitive Power Amplifier Technologies, Innovation Award, Skyworks Solutions Inc, USA, in 2008.

7. Who’s Who in America, 2010 Edition.

主要论文:

在国际会议及刊物上发表论文30余篇,主导撰写多部公司内部技术报告。曾多次组织和主持国际会议和论坛,作专题邀请报告10余次。

[1]1S. Fan, H. Tang, H. Zhao, X. Wang, A. Wang, B. Zhao, G. Zhang, “Enhanced Offset Averaging Technique for Flash ADC Design”, in press, Tsinghua Science and Technology, V16, N3, June 2011.

[2] X. Wang, L. Lin, H. Tang, H. Zhao, Q. Fang, J. Liu, S. Fan, A. Wang, B. Zhao, L. Yang and G. Zhang, “Low Power 3.1-10.6GHz IR-UWB Transmitter for Gbps Wireless Communications”, in press, Science China, 2011.

[3]J. Liu, L. Lin, X. Wang, H. Zhao, H. Tang, Q. Fang, A. Wang, L. Yang, H. Xie, S. Fan, B. Zhao, G. Zhang and X. Wang, “Tunable Low-Voltage Dual-Directional ESD Protection for RFICs”, Proc. IEEE RWS, 978-1-4244-7685-5/11, pp.279-282, January 2011.

[4]J. Liu, L. Lin, X. Wang, H. Zhao, H. Tang, Q. Fang, A. Wang, H. Chen, H. Xie, S. Fan, B. Zhao and G. Zhang, “Vast-Fast Low-Triggering LTdSCR ESD Protection Structure for RF ICs in CMOS”, IEEE RFIC Symp., pp.233-236, 2010.

[5]G. Zhang, S. Khesbak, A. Agarwal and S. Chin,”Evolution of Handset RFIC Power Amplifiers”, Invited,IEEE Microwave Magazine, pp. 60-69, Feb., 2010.

[6]G. Zhang,”Linear Handset Power Amplifier Architectures and its Packaging Technologies”, Invited,Proc. IEEE International Conference on Solid State and Integrated Circuit Technology (ICSICT),November, 2010.

[7]G. Zhang, “Multi-mode handset power amplifier design with high performance daisy chain coupler at cell band”, Proc. Skyworks Tech Conf., 2010.

[8]G. Zhang and J. Hoang “Self-compensated high performance daisy chain coupler for handset linear power amplifier applications”. Proc. Skyworks Tech. Conf. 2010.

[9] Lin, X. Wang, H. Tang, Q. Fang, H. Zhao, A. Wang, R. Zhan, H. Xie, C. Gill, B. Zhao, Y. Zhou, G. Zhang and X. Wang, “Whole-Chip ESD Protection Design Verification by CAD”, Invited, Proc. EOS/ESD Symp, pp.28-37, 2009.

[10]X. Wang, B. Qin, H. Xie, L. Lin, H. Tang, Q. Fang, H. Zhao, S. Wang, A. Wang, H. Chen, B. Zhao, Y. Zhou, L. Yang and G. Zhang, “FCC-EIRP-Aware UWB Pulse Generator Design Approach”, Invited, Proc. IEEE Intl. Conf. Ultra Wideband (ICUWB), pp.592-596, 2009.

[11]F. Zhang, Z. Wang, A. Wang, W. Chen, B. Zhao and G. Zhang, “Design Optimization and Modeling of on-Chip RF Inductors in 0.13µm and 90nm Standard CMOS”, Proc. IEEE MWSCAS, pp.975-978, 2009.

[12]X. Mu, Z. Alon, G. Zhang and S. Chang,”Analysis of Output Power Variation under Mismatched Antenna Load in Power Amplifier FEM with Directional Coupler”, Proc. IEEE MTTS-IMS, pp.549-552, 2009.

[13]G. Zhang, S. Chang, S. Chen and J. Sun, “Dual Mode Efficiency Enhanced Linear Power Amplifiers Using a New Balanced Structure”, Proc. IEEE RFIC Symp., 2009.

[14]X. Wang, H. Tang, L. Lin, Q. Fang, H. Zhao, Albert Wang, G. Zhang, X. Wang, Y Zhou, Lee Yang and H. Chen , “ESD Protection for RF/AMS ICs: Design and Optimization”, Invited, Proc. IEEE Intl. Conf. IC Design and Technology (ICICDT), pp25-28, May 2009.

[15]G. Zhang and S. Chang,”Power Amplifier Architectures for 3G Handsets: Balanced v.s. Single-ended Structure”,Invited,IEEE RFIC/IMS Workshop on Power Amplifiers and Transmitters for Mobile Products, 2008.

[16]X. Mu, G. Zhang and S. Chang, “AMS power amplifier design from Passkey to Castor”, Proc. Skyworks Tech. Conf., 2008.

[17]G. Zhang, S. Chang, Z. Alon, Albert Wang (not me Be accurate.) and K. Weller,”A Balanced Power Amplifier and Its Implementation in Mobile Handsets”,Invited paper,Microwave Workshops and Exhibition MWE, 2007, Japan.

[18]G. Zhang, S. Chang and Z. Alon,”A High Performance Balanced Power Amplifier and Its Integration into a Front-end Module at PCS Band”,Proc. IEEE MTTS International Microwave Symp. (IMS), pp.251-254, 2007.

[19]G. Zhang, S. Chang and Albert Wang,”WCDMA PCS Handset Front End Module”,Proc. IEEE MTTS International Microwave Symp. (IMS), pp.304-307, 2006.

[20]G. Zhang, R. D. Pollard and C. M. Snowden, “Large Signal Optically Controlled HEMT and Oscillator Design”, IEE Proc.-G, Microwave, Antenna and Propagation, Vol. 143, No. 6, Dec., 1996.

[21]G. Zhang, R. D. Pollard and C. M. Snowden, “A Novel Technique for HEMT Tripler Design”, Proc. IEEE MTTS-IMS, 1996.

[22]G. Zhang, R. D. Pollard and C. M. Snowden, “The Characterization and Large Signal Modeling of pHEMTs with and without Illumination”, IEE Colliqium on Optical Control of Microwave Circuit, Feb., 1996.

[23]G. Zhang and R. Tao, “An 8mm Frequency Quadrupler”, Research and Progress of Solid State Electronics (SSE), Journal of Nanjing Electronics Device Institute , Nov., 1994.

[24]G. Zhang, “An 8mm IMPATT Injection-locked Amplifier”, Research and Progress of Solid State Electronics (SSE), Journal of Nanjing Electronics Device Institute ,Nov., 1993.

[25]G. Zhang and Q. Zou, “A W-band Electrically-tuned Oscillator”, Research and Progress of Solid State Electronics (SSE), Journal of Nanjing Electronics Device Institute, August 1993.

[26]G. Zhang and Q. Zou, “Design and Characterization of a W-Band Bias-tuned Gunn Diode Oscillator”, Proc. of Int’l Conf. Microwave and Communications, June 1992.

[27]G. Zhang and Q. Yang, “CAA of Discontinuities of Finline with Bends or T-junctions by the Finite Element Method”, Proc. of CIE/CIC National Conf. Microwave, Sept., 1987.

[28]G. Zhang and Q. Yang, “The Finite Element Method for Solving Dispersion Characteristics of Finline with a Circular Cross Section”, Journal of Nanjing Institute of Technology, May 1987.

知识产权:

Multi-mode High Efficiency Linear Power Amplifier,授权国家:美国(US7876160B2)

Multi-mode High Efficiency Linear Power Amplifier,授权国家:台湾中国(19308.0134U2)

Self-compensated daisy chain high directional coupler,申请国家:美国(patent pending)

A Method and Structures to Reduce Coupling Coefficient Variation and VSWR Using Intended Mismatch in Daisy Chain Couplers,申请国家:美国(patent pending)

Dual Supply HBT Biasing Circuit for Low Battery Usage申请国家:美国(patent pending)

A New LIPA-Based Architecture for Multi-mode Power Amplifier Applications,申请国家:美国(patent pending)

A Novel Tunable Structure for EMI Shielding and RF Performance Optimizing of Semiconductor Devices,申请国家:美国(patent pending)

RF Power Amplifier Thermal Relief Enabler using a Flip-chip Packaging Technology,申请国家:美国(patent pending)

New Laminate Plating Technology for High Performance and Low Cost RF Module Applications,申请国家:美国(patent pending)

A Novel RF Shielding Structure for RF Power Amplifier Module,申请国家:美国(patent pending)

科研项目:

1988-1989 Ka波段雪崩注入锁定放大器,多用,正样,一人,工程师,项目负责人

1990 Ku波段介质振荡器(FET DRO)、保安及自动门控制用的Ku波段收发前端,商用,澳大利亚,每年一万套,五人,工程师,项目负责人

1991-1993微组装Ku波段极宽带压控振荡器、W波段Gunn振荡器、Ka波段FWCW制导收发前端,多用,正样,十三人,微波集成电路设计组组长,项目管理

1996-1998 76GHz汽车防控及智能控制的收发前端模组,商用,日本丰田汽车公司产权所有,五人,高级工程师,项目负责人

1998-1999宽带卫星通讯系统的C及Ku波段,MMIC极低噪声pHEMT放大器芯片,商用,美国DirecTV公司,每年百万套,两人,高级工程师,项目负责人

2000-2001 C波段单路卫星通讯接收前端,商用,美国Echostar卫星电视公司,每年百万套,四人,首席工程师,项目负责人

2002-2003 Ku波段双路卫星通讯接收前端,商用,美国Echostar卫星电视公司,每年百万套,五人,项目经理,首席工程师

2003-2004 Ku波段VSAT卫星收发前端,多用,宽带卫星数据传输,小批量,五人,项目经理,首席设计师

2004-2005 WCDMA Front-end Module(FEM),商用,Motorola手机公司,小批量,五人,项目经理,首席设计师

2006-2007 HSPA Front-end Module(FEM),商用,MotorolaRiza机型,每年四百万套,五人,项目经理,首席设计师

2007-2008 GMSK/EDGE Quad-band, PA FEM,商用,Apple公司iPhone 4,2010年出货八百万套,七人工程部技术经理,首席设计师,项目负责人

2008-2010 Multi-mode Cell Band 800MHz PAM andWCDMA UMTS 900 PAM两款产品,商用,Samsung, Sony-Ericson及其他手机与数据卡产商至今出货四千万套,八人,工程部高级经理,智深首席设计师,项目负责人

2008至今面向软件无线电的可重构射频集成电路设计,国家863课题项目,十人,课题组长

2009至今多模式多频段宽带无线通信射频前端SoC芯片开发,国家863课题项目,十三人,课题付组

教学活动:

研究生课程:射频集成电路

我的团队:

团队主要从事射频、微波及毫米波单片电路及组件方面的产品研发,包括通信终端核心射频芯片如功率放大器、极低噪声放大器、混频器、振荡器(RFIC PA、LNA、Mixer、VCO)等,团队注重梯队的建设,以章国豪教授为领头人,包括博士、硕士在内的学生超过30人。

地址:广州市番禺区广州大学城外环西路100号广东工业大学行政楼325    邮编:510006

电话:020-39322722    邮箱:yzb@gdut.edu.cn