郑照强

作者: 时间:2019-04-02 点击数:

郑照强 ZHENG ZHAOQIANG 副教授

所属学院:

材料与能源学院

导师类别:

硕士生导师

科研方向:

半导体光电材料与微纳器件

联系方式:

zhengzhq5@gdut.edu.cn

招生学院:

材料与能源学院


个人简述

郑照强,副教授,硕士生导师,2017年博士毕业于中山大学光电材料与技术国家重点实验室,致力于高灵敏半导体光电探测器的开发,并进行自动驾驶、高光谱成像、以及深空通讯等探索性应用;研究内容包括新型二维材料的生长、光电性质研究以及微纳器件的组装(掩膜、光刻、电子束蒸镀、lift-off等)和应用等,涉及材料学和微电子学的交叉;目前已在Adv. Funct. Mater.ACS NanoNano Lett.Mater. Horiz.Small等国际高水平期刊发表 SCI论文180余篇,总引用5800余次,H因子42;承担国家自然科学基金面上项目、国家自然科学基金青年项目、广东省面上项目、广州市科技计划项目等多个项目。


学科领域

科学学位:材料科学与工程

专业学位:材料工程


教育背景

20176月  在中山大学 材料学专业 获博士学位

20146月  在深圳大学 光学工程专业  获硕士学位

20116月  在湖南大学 电子科学与技术专业  获学士学位


工作经历

20194月—201911月  在香港中文大学 担任访问学者

20177月  在广东工业大学  担任副教授职务


学术兼职

担任Nat. Commun.Adv. Mater.Adv. Funct. Mater.Small等期刊审稿人


主要荣誉

2024  “青年百人”考核结果优秀

2024  “星级安全实验室”

2024/2021 获学院青年教师教学竞赛三等奖


主要论文

5年(2020.1-2025.3)的代表性论文

[1] Chen, M.; Wu, Z.; Qiu, Z.; Peng, J.; Gao, W.; Yang, M.; Huang, L.; Yao, J.; Zhao, Y.; Zheng, Z.*; Ni, Y.*; Li, J. Lensless Polarimetric Imaging and Encryption Enabled by Te/ReSe2 van der Waals Heterostructure Polarization-Sensitive Photodetector. Nano Lett. 2025, 25(7), 3002-3010.

[2] Xiao, Y.; Luo, Z.; Qiu, Z.; Liang, Y.; Gao, W.; Yang, M.; Zhao, Y.; Zheng, Z.*; Yao, J.*; Li, J.  Advanced T-In2Se3/M-WS2/B-WSe2 Photodetectors Enabled by Cascaded Band Tailoring and Charge Reservoir Engineering. Small 2025, 2409843. DOI: 10.1002/smll.202409843.

[3] Yu, L.; Dong, H.; Zhang, W.; Zheng, Z.*; Liang, Y.; Yao, J.* Development and challenges of polarization-sensitive photodetectors based on 2D materials. Nanoscale Horiz. 2025, DOI: 10.10 39/d4nh00624k.

[4] Ma, Y.; Liang, H.; Guan, X.; Chen, Y.; Zheng, Z.*; Du, C.; Ma, C.; Huang, W.; Zou, Y.; Yao, J.*; Yang, G. Flexible and impact-resistant antimony selenide photodetectors enabled by pulsed-laser deposition and their application in imaging beyond human vision. J. Mater. Sci. Technol. 2025, 225, 49-58.

[5] Chen, Y.; Liang, H.; Guan, X.; Ma, Y.; Zheng, Z.*; Ma, C.; Du, C.; Yao, J.* In Situ Construction of Flexible Low-Dimensional van der Waals Material Photodetectors. Adv. Phys. Res. 2025, 2400183.

[6] Chen, M.; Chen, X.; Wu, Z.; Huang, Z.; Gao, W.; Yang, M.; Xiao, Y.; Zhao, Y.; Zheng, Z.*; Yao, J.*; Li, J. An Ultrasensitive Bi2O2Se/In2S3 Photodetector with Low Detection Limit and Fast Response toward High-Precision Unmanned Driving. ACS Nano 2024, 18 (40), 27579-27589.

[7] Qiu, Z.; Luo, Z.; Chen, M.; Gao, W.; Yang, M.; Xiao, Y.; Huang, L.; Zheng, Z.*; Yao, J.; Zhao, Y.; Li, J.* Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications. ACS Nano 2024, 18 (39), 27055-27064.

[8] Zhang, Q.; Wu, Z.; Chen, X.; Gao, W.; Yang, M.; Xiao, Y.; Yao, J.; Liang, Y.; Zheng, Z.*; Tao, L.; Li, J.* Ta2NiSe5/MoTe2/Graphene van der Waals Heterostructures Toward Ultrabroadband and Polarization-Sensitive Imaging. Adv. Opt. Mater. 2024, 12 (15), 2302958.

[9] Wu, W.; Liu, Z.; Qiu, Z.; Wu, Z.; Li, Z.; Yang, X.; Han, L.; Li, C.; Huo, N.; Wang, X.; Yao, J.; Zheng, Z.*; Li, J.* An Ultrasensitive ReSe2/WSe2 Heterojunction Photodetector Enabled by Gate Modulation and its Development in Polarization State Identification. Adv. Opt. Mater. 2024, 12 (2), 2301410.

[10] Wu, Z.; Chen, M.; Liu, X.; Peng, J.; Yao, J.; Xue, J.; Zheng, Z.*; Dong, H.; Li, J.* Sandwiched WS2/MoTe2/WS2 Heterostructure with a Completely Depleted Interlayer for a Photodetector with Outstanding Detectivity. ACS Appl. Mater. Interfaces 2024, 16 (28), 36609-36619.

[11] Yu, L.; Liu, X.; Chen, M.; Peng, J.; Xu, T.; Gao, W.; Yang, M.; Du, C.; Yao, J.; Song, W.; Dong, H.*; Li, J.; Zheng, Z.* Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering. ACS Appl. Mater. Interfaces 2024, 16 (17), 22207-22216.

[12] Ma, Y.; Liang, H.; Guan, X.; Xu, S.; Tao, M.; Liu, X.; Zheng, Z.*; Yao, J.*; Yang, G. Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices? Nanoscale Horiz. 2024, 9 (10), 1599-1629.

[13] Li, Z.; Zheng, T.; Yang, M.; Sun, Y.; Luo, D.; Gao, W.; Zheng, Z.*; Li, J.* A Dual Mode MoTe2/WS2/WSe2 Double Van der Waals Heterojunctions Phototransistor for Optical Imaging and Communication. Adv. Opt. Mater. 2024, 12 (18), 2400023. DOI: 10.1002/adom.202400023. ISSN: 2195-1071.

[14] Gao, J.; Tao, L.; Chen, J.; Huang, J.; Zhou, Y.; Yang, M.; Sun, Y.; Huo, N.; Zheng, Z.*; Luo, D.; Gao, W.* 2D Multifunctional Phototransistor Based on MoTe2/Graphene/SnS0.25Se0.75 Heterostructure with High Photogain and Reconfigurable Polarized Detection. Adv. Opt. Mater. 2024, 12(36), 2401739. DOI: 10.1002/adom.202401739. ISSN: 2195-1071.

[15] Chen, X.; Zhang, Q.; Peng, J.; Gao, W.; Yang, M.; Yu, P.; Yao, J.; Liang, Y.; Xiao, Y.; Zheng, Z.*; Li, J.* Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation. ACS Appl. Mater. Interfaces 2024, 16 (11), 13927-13937. DOI: 10.1021/acsami.3c16815. ISSN: 1944-8244.

[16] Niu, Y.; Zhou, X.; Gao, W.; Fu, M.; Duan, Y.; Yao, J.; Wang, B.; Yang, M.*; Zheng, Z.*; Li, J. Interfacial Engineering of In2Se3/h-BN/CsPb(Br/I)3 Heterostructure Photodetector and Its Application in Automatic Obstacle Avoidance System. ACS Nano 2023, 17 (14), 13760-13768.

[17] Yan, J.; Yang, X.; Liu, X.; Du, C.; Qin, F.; Yang, M.; Zheng, Z.*; Li, J.* Van der Waals Heterostructures With Built-In Mie Resonances For Polarization-Sensitive Photodetection. Adv. Sci. 2023, 10 (9), 2207022.

[18] Yang, B.; Gao, W.; Li, H.; Gao, P.; Yang, M.; Pan, Y.; Wang, C.; Yang, Y.; Huo, N.; Zheng, Z.*; Li, J.* Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging. Nanoscale 2023, 15 (7), 3520-3531.

[19] Luo, Z.; Xu, H.; Gao, W.; Yang, M.; He, Y.; Huang, Z.; Yao, J.; Zhang, M.; Dong, H.; Zhao, Y.; Zheng, Z.*; Li, J.* High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2/Te Tunneling Heterostructure. Small 2023, 19 (15), 2207615.

[20] Huang, Z.; Yang, M.; Qiu, Z.; Luo, Z.; Chen, Y.; Du, C.; Yao, J.; Dong, H.; Zheng, Z.*; Li, J.* Mixed-dimensional WS2/WSe2/Si unipolar barrier heterostructure for high-performance photodetection. Sci. China Mater. 2023, 66 (6), 2354-2363.

[21] Huang, Z.; Luo, Z.; Deng, Z.; Yang, M.; Gao, W.; Yao, J.; Zhao, Y.; Dong, H.; Zheng, Z.*; Li, J.* Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices. Small Methods 2023, 7 (6), 2201571.

[22] Zhou, Y.; Han, L.; Song, Q.; Gao, W.; Yang, M.; Zheng, Z.*; Huang, L.; Yao, J.; Li, J.* Hybrid 1D/2D heterostructure with electronic structure engineering toward high-sensitivity and polarization-dependent photodetector. Sci. China Mater. 2022, 65 (3), 732-740.

[23] Yang, M.; Luo, Z.; Gao, W.; Zhang, M.; Huang, L.; Zhao, Y.; Yao, J.; Wu, F.; Li, J.; Zheng, Z.* Robust Deposition of Sub-Millimeter WSe2 Drive Ultrasensitive Gate-Tunable 2D Material Photodetectors. Adv. Opt. Mater. 2022, 10 (19), 2200717.

[24] Luo, Z.; Yang, M.; Wu, D.; Huang, Z.; Gao, W.; Zhang, M.; Zhou, Y.; Zhao, Y.; Zheng, Z.*; Li, J. Rational Design of WSe2/WS2/WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity. Small Methods 2022, 6 (9), 2200583.

[25] Lu, J.; Yan, J.; Yao, J.; Zheng, Z.*; Mao, B.; Zhao, Y.; Li, J.* All-Dielectric Nanostructure Fabry-Pérot-Enhanced Mie Resonances Coupled with Photogain Modulation toward Ultrasensitive In2S3 Photodetector. Adv. Funct. Mater. 2021, 31 (8), 2007987.

[26] Yang, F.#; Zheng, Z.#; He, Y.; Liu, P.; Yang, G. A New Wide Bandgap Semiconductor: Carbyne Nanocrystals. Adv. Funct. Mater. 2021, 31 (36), 2104254.

[27] Zhou, Y.; Zhang, L.; Gao, W.; Yang, M.; Lu, J.; Zheng, Z.*; Zhao, Y.; Yao, J.; Li, J.* A reasonably designed 2D WS2 and CdS microwire heterojunction for high performance photoresponse. Nanoscale 2021, 13 (11), 5660–5669.

[28] Yang, M.; Yan, J.; Ma, C.; Gao, W.; Zhou, Y.; Yao, J.; Zheng, Z.*; Wu, F.; Li, J.* Optical Resonance Coupled with Electronic Structure Engineering toward High-Sensitivity Photodetectors. Adv. Opt. Mater. 2021, 9 (22), 2101374.

[29] Yang, M.; Gao, W.; Song, Q.; Zhou, Y.; Huang, L.; Zheng, Z.*; Zhao, Y.; Yao, J.; Li, J.* Universal Strategy Integrating Strain and Interface Engineering to Drive High-Performance 2D Material Photodetectors. Adv. Opt. Mater. 2021, 9 (15), 2100450.

[30] Yang, M.; Gao, W.; He, M.; Zhang, S.; Huang, Y.; Zheng, Z.*; Luo, D.; Wu, F.; Xia, C.; Li, J.* Self-driven SnS1−xSex alloy/GaAs heterostructure based unique polarization sensitive photodetectors. Nanoscale 2021, 13 (36), 15193-15204.

[31] Zheng, Z.; Yao, J.; Li, J.*; Yang, G.* Non-layered 2D materials toward advanced photoelectric devices: progress and prospects. Mater. Horiz. 2020, 7 (9), 2185-2207.

[32] Zhaoqiang, Z.; Peifeng, C.; Jianting, L.; Jiandong, Y.; Yu, Z.; Menglong, Z.; Mingming, H.; Jingbo, L. Self-Assembly In2Se3/SnSe2 Heterostructure Array with Suppressed Dark Current and Enhanced Photosensitivity for Weak Signal. Sci. China Mater. 2020, 63, 1560-1569.

[33] Lu, J.; Zheng, Z. Q.*; Yao, J.; Gao, W.; Xiao, Y.; Zhang, M.; Li, J. An Asymmetric Contact Induced Self-Powered 2D In2S3 Photodetector towards High-Sensitivity and Fast-Response. Nanoscale 2020, 12 (13), 7196-7205.

[34] Lu, J.; Yao, J.; Yan, J.; Gao, W.; Huang, L.; Zheng, Z.*; Zhang, M.; Li, J.* Strain engineering coupled with optical regulation towards a high-sensitivity In2S3 photodetector. Mater. Horiz. 2020, 7 (5), 1427-1435.

[35] Gao, W.#; Zheng, Z.#; Wen, P.; Huo, N.; Li, J.* Novel two-dimensional monoelemental and ternary materials: growth, physics and application. Nanophotonics 2020, 9 (8), 2147-2168.



知识产权

[1] 郑照强,全华文,招瑜;一种TMDs合金纳米片的制备方法及其作为钝化层和增益层的高性能光电探测器;专利号:ZL202411216597.3

[2] 黄梓豪,郑照强;一种硒化铋电极及其制备方法和应用;专利号:ZL202210943546.5

[3] 罗中通,郑照强;一种可控生长的WSe2薄片及其制备方法和应用;专利号:ZL202210295154.2

[4] 周瑜琛,郑照强;一种二维二硫化钨自构同质结及其制备方法和应用;专利号:ZL202010871962.X

[5] 郑照强,全华文,蒲作城,招瑜;一种通过外延生长制备异质结构的方法及其产品与应用;申请号:202510089099.5

[6] 郑照强,蒲作城,全华文,招瑜;一种二维Te/ReSe2变角异质结光电探测器及其制备方法和应用;申请号:2025101124029

[7] 郑照强,陈美妃,黄梓豪,招瑜;一种二维铟掺杂的铋氧硒及其制备方法和应用;申请号:202310374893.5

[8] 郑照强,李新琪,招瑜;一种级联型梯度结构的In2S3纳米片及其制备方法和应用;申请号:202410973582.5


科研项目

[1] 国家自然科学基金面上项目(2022-2025)项目负责人

[2] 国家自然科学基金面上项目(2020-2023)项目参与人

[3] 国家自然科学基金青年基金项目(2019-2021)项目负责人

[4] 广东省自然科学基金面上项目(2024-2026)项目负责人

[5] 广东省普通高校特色创新类项目(自然科学类)(2019-2021)项目负责人

[6] 广州市科技计划“启航”项目(2022-2024)项目负责人


地址:广州市番禺区广州大学城外环西路100号广东工业大学行政楼325    邮编:510006

电话:020-39322722    邮箱:yzb@gdut.edu.cn  粤ICP备05008833号