钟伟

作者:集成电路学院 时间:2021-04-28 点击数:




  钟伟 副教授 硕士生导师

   联系方式zwnice@gdut.edu.cn

   所属团队:微纳电子器件与集成技术研究团队




 

简介:

钟伟,IEEE Member,广东工业大学青年百人A类特聘副教授,硕士生导师。主要从事金属氧化物薄膜晶体管、柔性传感器、柔性电子器件与集成、柔性集成电路等方面研究。主持国家自然科学基金、博士后科学基金等项目,并参与多项国家和省部级研发项目;发表SCI/EI论文20余篇,授权发明专利2项。


 

研究方向:

1.  高性能金属氧化物薄膜晶体管的研究;

2.  高性能柔性金属氧化物薄膜晶体管的集成与电路应用

 

教育经历:

2016.9-2019.6,华南理工大学,微电子学与固体电子学,博士学位

2012.9-2015.6,华南师范大学,材料物理与化学,硕士学位;

2008.9-2012.6,长春理工大学,无机非金属材料,学士学位;

 

工作经历:

2019/09--2021/09 香港科技大学  先进显示与光电子技术国家重点实验室   博士后

2015/06--2016/08  上海华虹宏力半导体制造有限公司      工程师


 

科研项目:

1. 基于垂直薄膜晶体管的无电容DRAM存储单元研究,国家自然科学基金青年基金,62204064,2023.01-2025.12,主持。

2. 基于铜互联的柔性InSnZnO薄膜晶体管及其应用的研究, 中国博士后科学基金,2020M672628,2020.01-2021.12,主持。

3. 柔性顶栅InSnZnO薄膜晶体管关键技术研究,广东省基础与应用研究基金项目,2019A1515011820,2019.10-2022.09,参与。

4. 应用于高分辨率AMOLED显示的InSnZnO薄膜晶体管及其有源阵列研究,广州市对外合作科技专项,201807010098,2018.04-2020.03,参与。


 

科研成果:

1.代表性学术论文:

1. Zhong Wei, Zhan Jianfeng, Liu Yuan, Tan Lijun, Lan Linfeng, Deng Sunbin, et al. Gate Dielectric Treated by Self-Assembled Monolayers (SAMs) to Enhance the Performance of InSnZnO Thin-Film Transistors. IEEE Transactions on Electron Devices, 2022, Early Access.

2.  Chen Yayi, Li Bin, Zhong Wei, Luo Dongxiang, Li Guijun, Zhou Changjian, et al. Effect of Head Groups in Self-Assembled Monolayer Passivation on Properties of InSnZnO Thin-Film Transistors. IEEE Transactions on Electron Devices, 2022, 69(1): 160-165.

3.  Li Hui, Deng Sunbin, Xu Yuming, Zhong Wei, Luo Dongxiang, Li Guijun, et al. A Differential Ring Oscillator With Tail Current Source Control Scheme Using N-Type Oxide TFTs. IEEE Transactions on Electron Devices, 2022, 69(4): 1870-1875.

4.  Xu Yuming, Li Bin, Zhong Wei, Deng Sunbin, Fan Houbo, Wu Zhaohui, et al. A unipolar thinfilm transistorbased amplifier with enhanced DC offset suppression. Electronics Letters, 2021, 57(2): 67-70.

5.  Deng Sunbin, Zhong Wei, Dong Shou-Cheng, Chen Rongsheng, Li Guijun, Zhang Meng, et al. Thermal Budget Reduction in Metal Oxide Thin-Film Transistors via Planarization Process. IEEE Electron Device Letters, 2021, 42(2): 180-183.

6.  Xu Yuming, Zhong Wei, Li Bin, Deng Sunbin, Fan Houbo, Wu Zhaohui, et al. An Integrator and Schmitt Trigger Based Voltage-to-Frequency Converter Using Unipolar Metal-Oxide Thin Film Transistors. IEEE Journal of theElectron Devices Society, 2021, 9: 144-150.

7. Zhong Wei, Kang Liangyun, Deng Sunbin, Lu Lei, Yao Ruohe, Lan Linfeng, et al. Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors. IEEE Transactions on Electron Devices, 2021, 68(10): 4956-4961.

8. Xu Yuming, Wu Zhaohui, Li Bin, Deng Sunbin, Zhong Wei, Li Guijun, et al. Oxide TFT Frontend Amplifiers for Flexible Sensing Systems. IEEE Transactions on Electron Devices, 2021, 68(12): 6190-6196.

9. Chen Yayi, Li Bin, Zhong Wei, Li Guijun, Lu Lei, Zhou Changjian, et al. InSnZnO Thin-Film Transistors With Nitrogenous Self-Assembled Multilayers Passivation. IEEE Transactions on Electron Devices, 2021, 68(11): 5612-5617.

10. Zhang Jianfeng, Zhong Wei, Liu Yuan, Huang Jincheng, Deng Sunbin, Zhang Meng, et al. A High-Performance Photodetector Based on 1D Perovskite Radial Heterostructure. Advanced Optical Materials, 2021, 9(24): 2101504.

11. Deng Sunbin, Dong Shou Cheng, Chen Rongsheng, Zhong Wei, Li Guijun, Zhang Meng, et al. A cost-effective fluorination method for enhancing the performance of metal oxide thin-film transistors. Journal of the Society for Information Display, 2021, 29(5): 318-327.

12. Yin Xuemei, Chen Yayi, Li Guoyuan, Zhong Wei, Deng Sunbin, Lu Lei, et al. Analysis of low frequency noise in situ fluorine-doped ZnSnO thin-film transistors. AIP Advances, 2021, 11(4): 45326.

13. Yin Xuemei, Deng Sunbin, Li Guoyuan, Zhong Wei, Chen Rongsheng, Li Guijun, et al. Low Leakage Current Vertical Thin-Film Transistors With InSnO-Stabilized ZnO Channel. IEEE Electron Device Letters, 2020, 41(2): 248-251.

14. Xu Yuming, Li Bin, Deng Sunbin, Qin Yuning, Fan Houbo, Zhong Wei, et al. A Novel Envelope Detector Based on Unipolar Metal-Oxide TFTs. IEEE Transactions on Circuits and Systems II: Express Briefs, 2020, 67(11): 2367-2371.

15. Zhong Wei, Yao Ruohe, Liu Yuan, Lan Linfeng, Chen Rongsheng. Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors. IEEE Transactions on Electron Devices, 2020, 67(8): 3157-3162.

16. Zhong Wei, Yao Ruohe, Chen Zhijian, Lan Linfeng, Chen Rongsheng. Self-Assembled Monolayers (SAMs)/Al2O3 Double Layer Passivated InSnZnO Thin-Film Transistor. IEEE Access, 2020, 8: 101834-101839.

17. Weng Shufeng, Chen Rongsheng, Zhong Wei, Deng Sunbin, Li Guijun, Yeung Fion Sze Yan, et al. High-Performance Amorphous Zinc-Tin-Oxide Thin-Film Transistors With Low Tin Concentration. IEEE Journal of the Electron Devices Society, 2019, 7: 632-637.

18. Qin Yuning, Li Guoyuan, Xu Yuming, Chen Rongsheng, Deng Sunbin, Zhong Wei, et al. Low-Power Design for Unipolar ITO-Stabilized ZnO TFT RFID Code Generator Using Differential Logic Decoder. IEEE Transactions on Electron Devices, 2019, 66(11): 4768-4773.

19. Zhong Wei, Li Guoyuan, Lan Linfeng, Li Bin, Chen Rongsheng. InSnZnO Thin-Film Transistors With Vapor- Phase Self-Assembled Monolayer as Passivation Layer. IEEE Electron Device Letters, 2018, 39(11): 1680-1683.

20. Zhong Wei, Deng Sunbin, Wang Kai, Li Guijun, Li Guoyuan, Chen Rongsheng, et al. Feasible Route for a Large Area Few-Layer MoS2 with Magnetron Sputtering. Nanomaterials, 2018, 8(8): 590.

21. Zhong Wei, Li Guoyuan, Lan Linfeng, Li Bin, Chen Rongsheng. Effects of annealing temperature on properties of InSnZnO thin film transistors prepared by Co-sputtering. RSC Advances, 2018, 8(61): 34817-34822.

22. Xu Yuming, Deng Sunbin, Wu Zhaohui, Li Bin, Qin Yuning, Zhong Wei, et al. The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics. IEEE Transactions on Electron Devices, 2018, 65(12): 5395-5399.

23. Zhong Wei, Li Guoyuan, Chen Rongsheng. Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance. 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors; 2018 2018-01-01: IEEE; 2018. p. 1.

24. Yin Xuemei, Deng Sunbin, Li Guoyuan, Zhong Wei, Chen Rongsheng, Wong Man, et al. Vertical Channel ITO-stabilized ZnO Thin-Film Transistors. IEEE International Conference on Electron Devices & Solid State Circuits; 2018 2018-01-01: IEEE; 2018. p. 1-3.

25. Zhong Wei, Li Guoyuan, Deng Sunbin, Yin Xuemei, Lan Linfeng, Chen Rongsheng, et al. P-1.2: Photoluminescence and Electrical Properties study of ITO-stabilized ZnO Thin-Film Transistors with different annealing temperatures. SID Symposium Digest of Technical Papers, 2018, 49(S1): 520-523.

26. Xu Yuming, Wu Zhaohui, Deng Sunbin, Qin Yuning, Zhong Wei, Chen Rongsheng, et al. 30.1: Transparent Basic Logic Circuits with ITO-Stabilized ZnO Thin Film Transistors. SID Symposium Digest of Technical Papers, 2018, 49(S1): 322-325.

27. Zhong Wei, Li Guoyuan, Chen Rongsheng, Lan Linfeng, Zhang Xu, Pei Weihua, et al. A Study on the Bottom-gate ITO-stabilized ZnO Thin-Film Transistors. 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2017.


2.知识产权:

1.     陈荣盛;钟伟;邓孙斌;李国元;吴朝晖;李斌,一种二硫化钼薄膜的制备方法(已授权)CN201910049361.8

2.     陈荣盛; 钟伟; 邓孙斌; 尹雪梅; 李国元,一种金属氧化物薄膜晶体管及其钝化层的制备方法(已公开)CN201811405391.X

3.     陈荣盛; 康良云; 钟伟,金属氧化物薄膜晶体管及其制备方法和钝化层的制备方法(已公开)CN201910623144.5

4.     刘俊杰; 陈荣盛; 钟伟,具有钝化增强层的金属氧化物薄膜晶体管及其制作方法(已公开)CN201910691468.2

5.     陈荣盛; 李荣媛; 康良云; 钟伟,柔性衬底金属氧化物薄膜晶体管及其钝化层的制备方法(已公开)CN202010074659.7

 

 


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